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Photodetectors using III-V nitrides

Patent ·
OSTI ID:872031

A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.

Research Organization:
Boston Univ., MA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-94ER81843
Assignee:
Trustees of Boston University (Boston, MA)
Patent Number(s):
5,847,397
Application Number:
08/681,971
OSTI ID:
872031
Country of Publication:
United States
Language:
English

References (33)

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Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy
  • Misra, Mira; Moustakas, Theodore D.; Vaudo, Robert P.
  • SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, SPIE Proceedings https://doi.org/10.1117/12.211915
conference June 1995
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Intensity dependence of photoluminescence in GaN thin films journal January 1994
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE journal November 1989
Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111) journal June 1995
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Hydrogenation of Gallium Nitride journal January 1993
Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy journal September 1994
Growth of GaN by ECR-assisted MBE book January 1993
A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates journal January 1992
High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers journal June 1992
Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate journal September 1988
Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates journal March 1983
Local vibrational modes in Mg-doped gallium nitride journal May 1994
Blue‐violet light emitting gallium nitride pn junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy journal January 1995

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