Photodetectors using III-V nitrides
Patent
·
OSTI ID:541754
A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.
- Research Organization:
- Radiation Monitoring Devices
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-94ER81843
- Assignee:
- Boston Univ., MA (United States)
- Patent Number(s):
- US 5,677,538/A/
- Application Number:
- PAN: 8-499,710
- OSTI ID:
- 541754
- Country of Publication:
- United States
- Language:
- English
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