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Photodetectors using III-V nitrides

Patent ·
OSTI ID:871184
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A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Research Organization:
Boston Univ., MA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-94ER81843
Assignee:
Trustees of Boston University (Boston, MA)
Patent Number(s):
5,677,538
Application Number:
08/499,710
OSTI ID:
871184
Country of Publication:
United States
Language:
English

References (31)

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conference June 1995
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