Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

Patent · 31 December 1997

OSTI ID:871618

Tam, Shiu-Wing ^[1]

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1. Downers Grove, IL

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• DOE Contract Number: W-31109-ENG-38
• Assignee: University of Chicago (Chicago, IL)
• Patent Number(s): US 5765680
• OSTI ID: 871618
• Country of Publication: United States
• Language: English

Related Subjects

/205/
50
90
applications
comprising
device
disclosed
electronic applications
electrons
embedded
embedded tritium
illumination
illumination source
interticies
optoelectronic
optoelectronic applications
photovoltaic
photovoltaic device
porosity
porous
porous silicon
power
power source
prime
prime power
range
silicon
source
source comprising
stand-alone
stand-alone prime
surface
total
total porosity
tritiated
tritiated porous
tritium