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Title: Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

Abstract

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

Inventors:
 [1]
  1. Downers Grove, IL
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
870842
Patent Number(s):
US 5605171
Assignee:
University of Chicago (Chicago, IL)
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
porous; silicon; embedded; tritium; stand-alone; prime; power; source; optoelectronic; applications; illumination; comprising; electrons; surface; interticies; total; porosity; range; 50; 90; disclosed; tritiated; photovoltaic; device; tritiated porous; source comprising; illumination source; porous silicon; power source; photovoltaic device; total porosity; electronic applications; stand-alone prime; optoelectronic applications; embedded tritium; prime power; /136/250/257/310/

Citation Formats

Tam, Shiu-Wing. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications. United States: N. p., 1997. Web.
Tam, Shiu-Wing. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications. United States.
Tam, Shiu-Wing. Wed . "Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications". United States. https://www.osti.gov/servlets/purl/870842.
@article{osti_870842,
title = {Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications},
author = {Tam, Shiu-Wing},
abstractNote = {An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Patent:

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