Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications
Patent
·
OSTI ID:441868
Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.
- Research Organization:
- Univ. of Chicago, IL (United States)
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- Univ. of Chicago, IL (United States)
- Patent Number(s):
- US 5,605,171/A/
- Application Number:
- PAN: 8-517,001
- OSTI ID:
- 441868
- Resource Relation:
- Other Information: PBD: 25 Feb 1997
- Country of Publication:
- United States
- Language:
- English
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