Silicon metal-semiconductor-metal photodetector

Patent · 01 January 1997

OSTI ID:871252

Brueck, Steven R. J. ^[1]; Myers, David R ^[1]; Sharma, Ashwani K ^[1]

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1. Albuquerque, NM

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
• Assignee: Sandia National Laboratories (Albuquerque, NM)
• Patent Number(s): US 5691563
• OSTI ID: 871252
• Country of Publication: United States
• Language: English

Related Subjects

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absorption
absorption characteristics
altering
barrier
base
below
biased
carriers
carriers formed
carriers generated
characteristics
charge
charge carrier
charge carriers
collected
concentration
contribution
crystalline
defected
defects
electrodes
form
formed
formed below
generated
implantation
infrared
infrared spectral
layer
metal structure
metal-semiconductor-metal
metal-semiconductor-metal photodetector
msm
msm photodiodes
near
near infrared
photodetector
photodiode
photodiodes
photodiodes sensitive
produced
produces
quickly
radiation
range
reduce
region
region below
regions
schottky
schottky barrier
sensitive
silicon
silicon metal
silicon metal-semiconductor-metal
silicon msm
spectral
spectral range
structure
surface
upper
upper region
upper regions
visible