Silicon metal-semiconductor-metal photodetector

Patent · Wed Jan 01 00:00:00 EST 1997

OSTI ID:871252

Brueck, Steven R. J. ^[1]; Myers, David R ^[1]; Sharma, Ashwani K ^[1]

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1. Albuquerque, NM

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-76
• Assignee: Sandia National Laboratories (Albuquerque, NM)
• Patent Number(s): US 5691563
• OSTI ID: 871252
• Country of Publication: United States
• Language: English

Related Subjects

silicon
metal-semiconductor-metal
photodetector
msm
photodiodes
sensitive
radiation
visible
near
infrared
spectral
range
produced
altering
absorption
characteristics
crystalline
implantation
produces
defected
region
below
surface
concentration
defects
base
reduce
contribution
charge
carriers
formed
layer
generated
upper
regions
quickly
collected
biased
schottky
barrier
electrodes
form
structure
photodiode
upper regions
absorption characteristics
charge carrier
spectral range
near infrared
charge carriers
schottky barrier
upper region
silicon metal
region below
carriers formed
carriers generated
metal structure
infrared spectral
silicon msm
silicon metal-semiconductor-metal
metal-semiconductor-metal photodetector
msm photodiodes
formed below
photodiodes sensitive
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