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Title: Silicon metal-semiconductor-metal photodetector

Abstract

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Inventors:
 [1];  [1];  [1]
  1. (Albuquerque, NM)
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
OSTI Identifier:
870065
Patent Number(s):
US 5449945
Assignee:
United States of America as represented by U.S. Department of (Washington, DC) SNL
DOE Contract Number:  
AC04-76
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
silicon; metal-semiconductor-metal; photodetector; msm; photodiodes; sensitive; radiation; visible; near; infrared; spectral; range; produced; altering; absorption; characteristics; crystalline; implantation; produces; defected; region; below; surface; concentration; defects; base; reduce; contribution; charge; carriers; formed; layer; generated; upper; regions; quickly; collected; biased; schottky; barrier; electrodes; form; structure; photodiode; upper regions; absorption characteristics; charge carrier; spectral range; near infrared; charge carriers; schottky barrier; upper region; silicon metal; region below; carriers formed; carriers generated; metal structure; infrared spectral; silicon msm; silicon metal-semiconductor-metal; metal-semiconductor-metal photodetector; msm photodiodes; formed below; photodiodes sensitive; /257/

Citation Formats

Brueck, Steven R. J., Myers, David R., and Sharma, Ashwani K. Silicon metal-semiconductor-metal photodetector. United States: N. p., 1995. Web.
Brueck, Steven R. J., Myers, David R., & Sharma, Ashwani K. Silicon metal-semiconductor-metal photodetector. United States.
Brueck, Steven R. J., Myers, David R., and Sharma, Ashwani K. Sun . "Silicon metal-semiconductor-metal photodetector". United States. https://www.osti.gov/servlets/purl/870065.
@article{osti_870065,
title = {Silicon metal-semiconductor-metal photodetector},
author = {Brueck, Steven R. J. and Myers, David R. and Sharma, Ashwani K.},
abstractNote = {Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}

Patent:

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