Semiconductor tunnel junction with enhancement layer

Klem, John F; Zolper, John C

Semiconductor tunnel junction with enhancement layer

Patent · Wed Jan 01 04:00:00 EST 1997

OSTI ID:871198

Klem, John F ^[1]; Zolper, John C ^[2]

Sandia Park, NM
Albuquerque, NM

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

Research Organization:: SANDIA CORP

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: US 5679963

OSTI ID:: 871198

Country of Publication:: United States

Language:: English

References (7)

n ‐ p ‐( p ⁺ ‐ n ⁺ )‐ n Al _y Ga _{1− y} As‐GaAs‐In _x Ga _{1− x} As quantum‐well laser with p ⁺ ‐ n ⁺ GaAs‐InGaAs tunnel contact on n ‐GaAs Sugg, A. R.; Chen, E. I.; Richard, T. A. Applied Physics Letters, Vol. 62, Issue 20 https://doi.org/10.1063/1.109338	journal	May 1993
A 27.3% efficient Ga_0.5In_0.5P/GaAs tandem solar cell Olson, J. M.; Kurtz, S. R.; Kibbler, A. E. Applied Physics Letters, Vol. 56, Issue 7, p. 623-625 https://doi.org/10.1063/1.102717	journal	February 1990
GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells Miller, D. L.; Zehr, S. W.; Harris, J. S. Journal of Applied Physics, Vol. 53, Issue 1 https://doi.org/10.1063/1.329940	journal	January 1982
In _{1− x} Ga _x As‐GaSb _{1− y} As _y heterojunctions by molecular beam epitaxy Sakaki, H.; Chang, L. L.; Ludeke, R. Applied Physics Letters, Vol. 31, Issue 3 https://doi.org/10.1063/1.89609	journal	August 1977
Growth and properties of GaAsSb/InGaAs superlattices on InP Klem, J. F.; Kurtz, S. R.; Datye, A. Journal of Crystal Growth, Vol. 111, Issue 1-4 https://doi.org/10.1016/0022-0248(91)91053-D	journal	May 1991
Monolithic, series-connected InP/Ga/sub 0.47/In/sub 0.53/As tandem solar cells Wanlass, M. W.; Ward, J. S.; Emery, K. A. Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) https://doi.org/10.1109/PVSC.1993.347021	conference	January 1993
AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application Jung, D.; Parker, C. A.; Ramdani, J. Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093 https://doi.org/10.1063/1.354753	journal	August 1993

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Semiconductor tunnel junction with enhancement layer

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