Semiconductor tunnel junction with enhancement layer

Klem, John F; Zolper, John C

Title: Semiconductor tunnel junction with enhancement layer

Patent · Wed Jan 01 00:00:00 EST 1997

OSTI ID:871198

Klem, John F ^[1]; Zolper, John C ^[2]

Sandia Park, NM
Albuquerque, NM

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

View Patent

Cite

Export

Save

Research Organization:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: US 5679963

OSTI ID:: 871198

Country of Publication:: United States

Language:: English

References (7)

A 27.3% efficient Ga_0.5In_0.5P/GaAs tandem solar cell Olson, J. M.; Kurtz, S. R.; Kibbler, A. E. Applied Physics Letters, Vol. 56, Issue 7, p. 623-625 https://doi.org/10.1063/1.102717	journal	February 1990
n ‐ p ‐( p ⁺ ‐ n ⁺ )‐ n Al _y Ga _{1− y} As‐GaAs‐In _x Ga _{1− x} As quantum‐well laser with p ⁺ ‐ n ⁺ GaAs‐InGaAs tunnel contact on n ‐GaAs Sugg, A. R.; Chen, E. I.; Richard, T. A. Applied Physics Letters, Vol. 62, Issue 20 https://doi.org/10.1063/1.109338	journal	May 1993
Growth and properties of GaAsSb/InGaAs superlattices on InP Klem, J. F.; Kurtz, S. R.; Datye, A. Journal of Crystal Growth, Vol. 111, Issue 1-4 https://doi.org/10.1016/0022-0248(91)91053-D	journal	May 1991
GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells Miller, D. L.; Zehr, S. W.; Harris, J. S. Journal of Applied Physics, Vol. 53, Issue 1 https://doi.org/10.1063/1.329940	journal	January 1982
AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application Jung, D.; Parker, C. A.; Ramdani, J. Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093 https://doi.org/10.1063/1.354753	journal	August 1993
Monolithic, series-connected InP/Ga/sub 0.47/In/sub 0.53/As tandem solar cells Wanlass, M. W.; Ward, J. S.; Emery, K. A. Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) https://doi.org/10.1109/PVSC.1993.347021	conference	January 1993
In _{1− x} Ga _x As‐GaSb _{1− y} As _y heterojunctions by molecular beam epitaxy Sakaki, H.; Chang, L. L.; Ludeke, R. Applied Physics Letters, Vol. 31, Issue 3 https://doi.org/10.1063/1.89609	journal	August 1977

Similar Records

Semiconductor tunnel junction with enhancement layer

Patent · Tue Oct 21 00:00:00 EDT 1997 · OSTI ID:871198

Klem, J F; Zolper, J C

GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects

Conference · Sun Jan 01 00:00:00 EST 1995 · OSTI ID:871198

Zolper, J C; Klem, J F; Plut, T A; +1 more

Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy

Journal Article · Thu May 09 00:00:00 EDT 2019 · Physical Review Materials · OSTI ID:871198

Pandey, A.; Liu, X.; Deng, Z.; +7 more

Related Subjects

semiconductor
tunnel
junction
enhancement
layer
incorporation
pseudomorphic
gaassb
runnel
diode
structure
affords
degree
freedom
designing
junctions
p-n
device
interconnects
previously
doping
levels
varied
control
tunneling
properties
valence
band
alignment
respect
surrounding
materials
greatly
relax
requirements
tunnel junction
p-n junction
valence band
structure affords
diode structure
gaassb layer
enhancement layer
sb layer
doping levels
junction device
/257/

Title: Semiconductor tunnel junction with enhancement layer

Citation Formats

References (7)

Similar Records

Related Subjects