Highly doped layer for tunnel junctions in solar cells
Patent
·
OSTI ID:1373704
A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.
- Research Organization:
- THE BOEING COMPANY, Chicago, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-07GO17052
- Assignee:
- THE BOEING COMPANY
- Patent Number(s):
- 9,722,131
- Application Number:
- 12/404,795
- OSTI ID:
- 1373704
- Country of Publication:
- United States
- Language:
- English
Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts
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journal | September 1993 |
AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
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journal | August 1993 |
Application of δ-doping in GaAs tunnel junctions
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journal | January 1994 |
Growth and electrical characterization of Si delta‐doped GaInP by low pressure metalorganic chemical vapor deposition
|
journal | May 1996 |
Multi-junction III–V solar cells: current status and future potential
|
journal | July 2005 |
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