Tunnel-diode interconnect junctions for cascade solar cells

Technical Report · Tue Jun 01 04:00:00 EDT 1982

OSTI ID:5357411

Hayes, R E; Kowalchik, M; Gibart, P; Wagner, S; Chevrier, J

A study of GaAs tunnel diodes grown by liquid phase epitaxy for use as the interconnect junctions in multijunction cascade solar cells is reported. The peak current degradation due to high-temperature annealing of these p/sup +/ (Ge-doped) - n/sup +/ (Te-doped) LPE junctions is attributed to impurity diffusion. It is shown that, for typical doping densities, the product of the impurity diffusion coefficient and the high temperature processing time must be less than about 10/sup -12/ cm/sup 2/ if severe peak tunnel current degradation is to be avoided.

• Research Organization: Solar Energy Research Inst., Golden, CO (USA)
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5357411
• Report Number(s): SERI/TR-212-1518; ON: DE82015816
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AGING
ANNEALING
CASCADE SOLAR CELLS
CURRENT DENSITY
CURRENTS
DIFFUSION
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
HEAT TREATMENTS
IMPURITIES
MATERIALS
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
TELLURIUM
TUNNEL DIODES