Method for fabricating transistors using crystalline silicon devices on glass
Patent
·
OSTI ID:871128
- Menlo Park, CA
A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Number(s):
- US 5663078
- OSTI ID:
- 871128
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
method
fabricating
transistors
crystalline
silicon
devices
glass
single-crystal
overcomes
potential
damage
caused
device
voltage
bonding
employs
metal
layer
incorporated
transistor
accomplished
wafer
substrate
performed
current
pass
fabricated
removal
deposited
form
electrical
contact
add
functionality
single
gate-all-around
formed
silicon device
metal layer
electrical contact
silicon substrate
glass substrate
silicon wafer
crystalline silicon
silicon devices
crystal silicon
single-crystal silicon
method overcomes
fabricating transistors
voltage bonding
form electrical
potential damage
current pass
/438/
fabricating
transistors
crystalline
silicon
devices
glass
single-crystal
overcomes
potential
damage
caused
device
voltage
bonding
employs
metal
layer
incorporated
transistor
accomplished
wafer
substrate
performed
current
pass
fabricated
removal
deposited
form
electrical
contact
add
functionality
single
gate-all-around
formed
silicon device
metal layer
electrical contact
silicon substrate
glass substrate
silicon wafer
crystalline silicon
silicon devices
crystal silicon
single-crystal silicon
method overcomes
fabricating transistors
voltage bonding
form electrical
potential damage
current pass
/438/