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Title: Transistors using crystalline silicon devices on glass

Abstract

A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

Inventors:
 [1]
  1. Menlo Park, CA
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
869879
Patent Number(s):
US 5414276
Assignee:
Regents of University of California ()
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
transistors; crystalline; silicon; devices; glass; method; fabricating; single-crystal; overcomes; potential; damage; caused; device; voltage; bonding; employs; metal; layer; incorporated; transistor; accomplished; wafer; substrate; performed; current; pass; fabricated; removal; deposited; form; electrical; contact; add; functionality; single; gate-all-around; formed; silicon device; metal layer; electrical contact; silicon substrate; glass substrate; silicon wafer; crystalline silicon; silicon devices; crystal silicon; single-crystal silicon; method overcomes; fabricating transistors; voltage bonding; form electrical; potential damage; current pass; /257/438/

Citation Formats

McCarthy, Anthony M. Transistors using crystalline silicon devices on glass. United States: N. p., 1995. Web.
McCarthy, Anthony M. Transistors using crystalline silicon devices on glass. United States.
McCarthy, Anthony M. 1995. "Transistors using crystalline silicon devices on glass". United States. https://www.osti.gov/servlets/purl/869879.
@article{osti_869879,
title = {Transistors using crystalline silicon devices on glass},
author = {McCarthy, Anthony M},
abstractNote = {A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.},
doi = {},
url = {https://www.osti.gov/biblio/869879}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

Works referenced in this record:

A technology for high-performance single-crystal silicon-on-insulator transistors
journal, April 1987


Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
journal, July 1992


Laser crystallization of Si films on glass
journal, March 1982


Nanosecond Thermal Processing for Ultra-High-Speed Device Technology
journal, January 1989


Silicon-on-insulator (SOI) by bonding and ETCH-back
conference, January 1985