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Title: Transistors using crystalline silicon devices on glass

Abstract

A method is disclosed for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

Inventors:
Publication Date:
Research Org.:
University of California
OSTI Identifier:
46307
Patent Number(s):
US 5,414,276/A/
Application Number:
PAN: 8-137,402
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 426000; PA: EDB-95:078392; SN: 95001384499
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 9 May 1995
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; TRANSISTORS; FABRICATION; ELECTRIC POTENTIAL; ELECTRIC CURRENTS; MONOCRYSTALS

Citation Formats

McCarthy, A.M. Transistors using crystalline silicon devices on glass. United States: N. p., 1995. Web.
McCarthy, A.M. Transistors using crystalline silicon devices on glass. United States.
McCarthy, A.M. Tue . "Transistors using crystalline silicon devices on glass". United States.
@article{osti_46307,
title = {Transistors using crystalline silicon devices on glass},
author = {McCarthy, A.M.},
abstractNote = {A method is disclosed for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 09 00:00:00 EDT 1995},
month = {Tue May 09 00:00:00 EDT 1995}
}