Hydrogen bonding arrangements at Si--SiO{sub 2} interfaces
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)
- Department of Chemistry, North Carolina State University, Raleigh, North Carolina 27695 (United States)
An important issue in semiconductor device operation is the rate at which current or voltage stress creates defects that can eventually degrade device operation. Based on recent results on nitrided gate dielectrics, we have concluded that bonded-H at the Si--SiO{sub 2} interface plays a role in the formation of metastable defects that can be activated, and subsequently neutralized, by sequential trapping of injected holes and electrons. In this article, differences in defect behavior for Si--SiO{sub 2} interfaces that have been exposed to nitrogen (N-) atoms or N--H groups are discussed. Based on these results, a microscopic model for interfacial defects is proposed. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}
- OSTI ID:
- 87099
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 13; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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