XPS study of radiation-damaged Si-SiO/sub 2/ interfaces. [Electron beams]
Interfacial defects caused by electron beam irradiation in a scanning electron microscope of device quality Si-SiO/sub 2/ structures were observed directly by X-ray photoelectron spectroscopy (XPS). Radiation hard oxides (approximately 700 A thick) on Si were subjected to 20 keV electron bombardment and several annealing treatments. The radiation induces defects at the semiconductor oxide interface that were identified by XPS as Si with three bonds to oxygen and one dangling bond. The state anneals slowly (in a few days) at room temperature, but is removed within 30 min by N/sub 2/ or forming gas (90% N/sub 2/ + 10% H/sub 2/) anneals at 400 C. Although electron beam irradiation of thin (45 A) oxide structures is known to produce interface states with similar properties, this is the first report of XPS identification of states produced on device quality materials under standard processing conditions (i.e., those used for e-beam writing).
- Research Organization:
- Aerospace Corp., El Segundo, CA (USA)
- OSTI ID:
- 6236699
- Report Number(s):
- N-8311246; ATR-82(8453)-1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
BEAMS
CHALCOGENIDES
ELECTRON BEAMS
ELECTRON SPECTROSCOPY
ELEMENTS
ETCHING
HEAT TREATMENTS
LEPTON BEAMS
MATERIALS TESTING
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHOTOELECTRON SPECTROSCOPY
RADIATION EFFECTS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
SURFACE FINISHING
TESTING