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Radiation-induced defects in SiO/sub 2/ as determined with XPS

Journal Article · · IEEE Trans. Nucl. Sci.; (United States)
; ;

Device quality gate oxides (about 850 A) grown on Si (100) substrates are irradiated with 0 - 2theta eV electrons during in situ XPS measurements. These structures have been thinned stepwise to 25 to 60 A using a relatively benign wet-chemical depth-profiling procedure. An analytical method based on oxide/substrate intensity ratios is used to deduce the product of the atomic number density (D) and the electron mean free path (lambda) as a function of depth for these structures. Samples showing a wide variety of hole trapping efficiencies were examined. Si/sup +3/ species are formed in the region of the Si/Sitheta/sub 2/ interface and are observed during the course of their relaxation and annihilation. These formation results are correlated with the presence of strained Si-theta-Si bonds at the interfaces. Radiation hard and soft structures show different strained bond distributions in the interfacial region. The direct observation of bond cleavage and bond strain gradients in these samples is used to extend silica devitrification models to explain the generation of fixed oxide charge and interface states. This bond strain gradient (BSG) model is shown to be consistent with a variety of experimental EPR and electrical observations of hole- and electron-trap generation by ionizing radiation.

Research Organization:
Jet Propolsion Lab., Calif. Dist. Tech. Pasadena, CA 91109
OSTI ID:
5922544
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 29:6; ISSN IETNA
Country of Publication:
United States
Language:
English

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Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ATOMIC NUMBER
BONDING
CHALCOGENIDES
DEFECTS
DEPTH
DIMENSIONS
ELECTROMAGNETIC RADIATION
ELECTRON DENSITY
ELECTRON SPECTROSCOPY
ELECTRONS
ELEMENTARY PARTICLES
FABRICATION
FERMIONS
HOLES
IONIZING RADIATIONS
IRRADIATION
JOINING
LEPTONS
MEAN FREE PATH
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
X RADIATION