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Title: Optical device with low electrical and thermal resistance bragg reflectors

Abstract

A compound-semiconductor optical device and method. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors.

Inventors:
 [1]
  1. Albuquerque, NM
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
870657
Patent Number(s):
US 5568499
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
optical; device; electrical; thermal; resistance; bragg; reflectors; compound-semiconductor; method; provided; asymmetrically-graded; heterojunctions; compound; semiconductor; layers; forming; distributed; reflector; mirror; improved; efficient; light-emitting; devices; diodes; resonant-cavity; vertical-cavity; surface-emitting; lasers; formed; according; applied; formation; photodetectors; cavity surface; surface-emitting laser; emitting diodes; emitting diode; light-emitting diode; bragg reflector; vertical-cavity surface-emitting; semiconductor layer; compound semiconductor; optical device; surface-emitting lasers; improved electrical; thermal resistance; light-emitting diodes; semiconductor layers; resonant-cavity light-emitting; semiconductor optical; emitting laser; distributed bragg; emitting device; light-emitting device; emitting lasers; bragg reflectors; /372/257/

Citation Formats

Lear, Kevin L. Optical device with low electrical and thermal resistance bragg reflectors. United States: N. p., 1996. Web.
Lear, Kevin L. Optical device with low electrical and thermal resistance bragg reflectors. United States.
Lear, Kevin L. Mon . "Optical device with low electrical and thermal resistance bragg reflectors". United States. https://www.osti.gov/servlets/purl/870657.
@article{osti_870657,
title = {Optical device with low electrical and thermal resistance bragg reflectors},
author = {Lear, Kevin L},
abstractNote = {A compound-semiconductor optical device and method. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors.},
doi = {},
url = {https://www.osti.gov/biblio/870657}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

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Works referenced in this record:

High power conversion efficiencies and scaling issues for multimode vertical-cavity top-surface-emitting lasers
journal, July 1994


Low threshold planarized vertical-cavity surface-emitting lasers
journal, April 1990


Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
journal, November 1994


Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers
journal, December 1993


Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy
journal, September 1994


Elimination of heterojunction band discontinuities by modulation doping
journal, January 1992


N‐ and P‐ type dopant profiles in distributed Bragg reflector structures and their effect on resistance
journal, October 1992


Low resistance wavelength‐reproducible p ‐type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy
journal, April 1993