Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Optical device with low electrical and thermal resistance bragg reflectors

Patent ·
OSTI ID:870657
 [1]
  1. Albuquerque, NM
+ Show Author Affiliations

A compound-semiconductor optical device and method. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5568499
OSTI ID:
870657
Country of Publication:
United States
Language:
English

References (10)

GaAs, AlAs, and Al x Ga 1− x As: Material parameters for use in research and device applications journal August 1985
N‐ and P‐ type dopant profiles in distributed Bragg reflector structures and their effect on resistance journal October 1992
Low threshold planarized vertical-cavity surface-emitting lasers journal April 1990
Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy journal September 1994
Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers journal December 1993
High power conversion efficiencies and scaling issues for multimode vertical-cavity top-surface-emitting lasers journal July 1994
Low resistance wavelength‐reproducible p ‐type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy journal April 1993
Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface‐emitting lasers journal June 1990
Low threshold voltage vertical-cavity lasers fabricated by selective oxidation journal November 1994
Elimination of heterojunction band discontinuities by modulation doping journal January 1992

Similar Records

Optical device with low electrical and thermal resistance Bragg reflectors
Patent · Tue Oct 22 00:00:00 EDT 1996 · OSTI ID:392655
Unitary lens semiconductor device
Patent · Tue May 27 00:00:00 EDT 1997 · OSTI ID:489103
Unitary lens semiconductor device
Patent · Tue Dec 31 23:00:00 EST 1996 · OSTI ID:870970

Related Subjects

/372/257/
according
applied
asymmetrically-graded
bragg
bragg reflector
bragg reflectors
cavity surface
compound
compound semiconductor
compound-semiconductor
device
devices
diodes
distributed
distributed bragg
efficient
electrical
emitting device
emitting diode
emitting diodes
emitting laser
emitting lasers
formation
formed
forming
heterojunctions
improved
improved electrical
lasers
layers
light-emitting
light-emitting device
light-emitting diode
light-emitting diodes
method
mirror
optical
optical device
photodetectors
provided
reflector
reflectors
resistance
resonant-cavity
resonant-cavity light-emitting
semiconductor
semiconductor layer
semiconductor layers
semiconductor optical
surface-emitting
surface-emitting laser
surface-emitting lasers
thermal
thermal resistance
vertical-cavity
vertical-cavity surface-emitting