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Unitary lens semiconductor device

Patent ·
OSTI ID:870970

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5633527
OSTI ID:
870970
Country of Publication:
United States
Language:
English

References (8)

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers journal November 1994
Native‐oxide stripe‐geometry Al x Ga 1− x As‐GaAs quantum well heterostructure lasers journal January 1991
Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors journal August 1994
Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers journal September 1994
Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers journal July 1994
Native‐oxide defined ring contact for low threshold vertical‐cavity lasers journal July 1994
Low threshold half-wave vertical-cavity lasers journal November 1994
Low threshold voltage vertical-cavity lasers fabricated by selective oxidation journal November 1994