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Title: Unitary lens semiconductor device

Abstract

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Inventors:
 [1]
  1. (Albuquerque, NM)
Publication Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
870970
Patent Number(s):
US 5633527
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
unitary; lens; semiconductor; device; method; provided; layer; composition; varying; growth; direction; unitarily; forming; lenses; devices; formed; light-processing; microlenses; light-active; light-emitting; diodes; photodetectors; resonant-cavity; vertical-cavity; surface-emitting; lasers; resonant; cavity; cavity surface; surface-emitting laser; emitting diodes; emitting diode; light-emitting diode; vertical-cavity surface-emitting; semiconductor layer; semiconductor device; semiconductor devices; resonant cavity; surface-emitting lasers; light-emitting diodes; resonant-cavity light-emitting; emitting laser; unitary lens; lens semiconductor; emitting lasers; active device; /257/372/

Citation Formats

Lear, Kevin L. Unitary lens semiconductor device. United States: N. p., 1997. Web.
Lear, Kevin L. Unitary lens semiconductor device. United States.
Lear, Kevin L. Wed . "Unitary lens semiconductor device". United States. doi:. https://www.osti.gov/servlets/purl/870970.
@article{osti_870970,
title = {Unitary lens semiconductor device},
author = {Lear, Kevin L.},
abstractNote = {A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1997},
month = {Wed Jan 01 00:00:00 EST 1997}
}

Patent:

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  • A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.
  • In a semiconductor laser element, a semiconductor laser crystal having a pair of reflection surfaces and a pair of opposing principal surfaces is fused to a heat sink having a planar surface wider than each of the principal surfaces by a layer formed of a fusible metal on the planar surface, whereby one of the ohmic contacts formed on predetermined areas of the principal surfaces is brought into contact with a predetermined portion of the fusible metal layer. A unitary film of an electrically insulating material, such as silicon monoxide, silicon dioxide, silicon nitride, and/or aluminium oxide, is sputtered ormore » otherwise formed continuously on the reflection surfaces and on the exposed portion of the fusible metal layer left uncovered by the laser crystal fused to the heat sink. After the unitary film is formed on the other of the contacts, it is still possible to bond a metal lead directly to the other contact by employing an ultrasonic bonding technique. The fusible metal may be indium, tin, a solder, or a gold-tin, gold-silicon, or gold-germanium alloy, all of which are fusible at a temperature below about 370* C. The laser crystal may be a double or sin heterojunction or a homojunction crystal of lead sulfide or telluride or an intermetallic compound, such as gaas-alxga1-xas. The heat sink may be made of silicon, diamond of the iia type, or copper.« less
  • In a radiation-sensitive semiconductor element which is divided into a number of sub-elements, the surface potential in the sub-elements varies with incident radiation as a result of charge carriers generated by the radiation. As soon as an adjustable threshold value of this potential is reached in one or more of the sub-elements, a current starts to flow which is signalled by means of a detector and a detection unit. Because the speed of reaching the threshold value depends on the intensity of the radiation, the time measured between the adjustment of the threshold value and the signalling of the currentmore » is a measure of the radiation intensity. By means of such a semiconductor element, the associated detection unit and extra electronics, if any, the energy or the cross-section of a beam can be determined and be readjusted, if necessary. Such a semiconductor device can also be used very readily for focusing, for example in VLP apparatus.« less
  • An integral manifold-muffler-catalyst device for an internal combustion engine having a plurality of combustion cylinders generating exhaust gases is described, comprising: (a) a monolithic catalyst having a plurality of aligned passages for effecting laminar flow of the exhaust gases therethrough; (b) a high temperature resistant chamber assembly for close coupling the catalyst to the engine having (i) an expansion chamber for substantially dissipating low frequency sound waves of the exhaust gases and for modifying high frequency sound waves of the exhaust gases and (ii) manifolding passages at one side of the expansion chamber for collecting and delivering the exhaust gasesmore » from the cylinders to the expansion chamber; and (c) means for effecting converging flow from the expansion chamber to and substantially the full entrance face of the aligned passages and for effecting converging flow from the catalyst, the dual-stage convergence reflecting and attenuating high frequency sound waves carried by the exhaust gases by interference.« less
  • A method and apparatus to generate harmonically related laser wavelengths includes a pair of lenses at opposing faces of a non-linear optical material. The lenses are configured to promote incoming and outgoing beams to be normal to each outer lens surface over a range of acceptance angles of the incoming laser beam. This reduces reflection loss for higher efficiency operation. Additionally, the lenses allow a wider range of wavelengths for lasers for more universal application. Examples of the lenses include plano-cylindrical and plano-spherical form factors.