Integrated circuit failure analysis by low-energy charge-induced voltage alteration

Patent · Mon Jan 01 00:00:00 EST 1996

OSTI ID:870444

Cole, Jr., Edward I. ^[1]

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1. (2116 White Cloud St., NE., Albuquerque, NM 87112)

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Cole, Jr., Edward I. (2116 White Cloud St., NE., Albuquerque, NM 87112)
• Patent Number(s): US 5523694
• OSTI ID: 870444
• Country of Publication: United States
• Language: English

Related Subjects

integrated
circuit
failure
analysis
low-energy
charge-induced
voltage
alteration
scanning
electron
microscope
apparatus
method
described
detecting
imaging
open-circuit
defects
high-current
focused
beam
scanned
device
surface
generate
civa
signal
location
image
energy
prevent
electrical
breakdown
passivation
layers
minimize
radiation
damage
production-line
inspection
ics
qualification
scanning electron
voltage alteration
passivation layer
device surface
electron microscope
electron beam
integrated circuit
beam energy
failure analysis
radiation damage
open-circuit defects
electrical breakdown
prevent electrical
microscope apparatus
focused electron
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