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Integrated circuit failure analysis by low-energy charge-induced voltage alteration

Patent ·
OSTI ID:870444

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Cole, Jr., Edward I. (2116 White Cloud St., NE., Albuquerque, NM 87112)
Patent Number(s):
US 5523694
OSTI ID:
870444
Country of Publication:
United States
Language:
English

References (3)

Rapid Localization of IC Open Conductors using Charge-Induced Voltage Alteration (CIVA) conference March 1992
A New Technique for Imaging the Logic State of Passivated Conductors: Biased Resistive Contrast Imaging conference March 1990
IC failure analysis: techniques and tools for quality reliability improvement journal May 1993

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Related Subjects

/324/
alteration
analysis
apparatus
beam
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charge-induced
circuit
civa
damage
defects
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detecting
device
device surface
electrical
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focused
focused electron
generate
high-current
ics
image
imaging
inspection
integrated
integrated circuit
layers
location
low-energy
method
microscope
microscope apparatus
minimize
open-circuit
open-circuit defects
passivation
passivation layer
prevent
prevent electrical
production-line
qualification
radiation
radiation damage
scanned
scanning
scanning electron
signal
surface
voltage
voltage alteration