Integrated circuit failure analysis by low-energy charge-induced voltage alteration
A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs. 5 figs.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- SNL; SCA: 426000; 420500; PA: EDB-96:094813; SN: 96001600396
- Patent Number(s):
- US 5,523,694/A/
- Application Number:
- PAN: 8-225,119
- OSTI ID:
- 242594
- Resource Relation:
- Other Information: PBD: 4 Jun 1996
- Country of Publication:
- United States
- Language:
- English
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