Elevated voltage level I.sub.DDQ failure testing of integrated circuits
Patent
·
OSTI ID:870427
- Albuquerque, NM
Burn in testing of static CMOS IC's is eliminated by I.sub.DDQ testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip.
- Research Organization:
- SANDIA CORP
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- US 5519333
- OSTI ID:
- 870427
- Country of Publication:
- United States
- Language:
- English
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