Elevated voltage level I.sub.DDQ failure testing of integrated circuits

Patent · Mon Jan 01 00:00:00 EST 1996

OSTI ID:870427

Righter, Alan W ^[1]

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1. Albuquerque, NM

Burn in testing of static CMOS IC's is eliminated by I.sub.DDQ testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 5519333
• OSTI ID: 870427
• Country of Publication: United States
• Language: English

Related Subjects

elevated
voltage
level
ddq
failure
testing
integrated
circuits
burn
static
cmos
eliminated
levels
25
normal
operating
below
damage
chip
voltage levels
operating voltage
integrated circuits
integrated circuit
normal operating
voltage level
elevated voltage
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