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Process for producing large grain cadmium telluride

Patent ·
OSTI ID:870258
 [1];  [2]
  1. Arvada, CO
  2. Longmont, CO
+ Show Author Affiliations

A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

Research Organization:
Midwest Research Institute
DOE Contract Number:
AC36-83CH10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 5484736
OSTI ID:
870258
Country of Publication:
United States
Language:
English

References (2)

Large grained CdTe layers; feasibility as an all-thin-film solar cell journal January 1985
Optical transitions in CdTe thin films produced by hot- wall vacuum evaporation journal February 1987

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Related Subjects

-6
/438/136/148/
10
20
amounts
annealing
annealing temperature
atmosphere
beam
beam source
cadmium
cadmium telluride
cell
chamber
chamber containing
comprises
comprises providing
containing
deposited
deposition
effusion
evacuating
film
furnace
gas
gas atmosphere
grain
grain size
grain sizes
grains
grow
growth
heated
heating
inert
inert gas
molecular
molecular beam
period
placed
placing
polycrystalline
polycrystalline film
pressure
process
process comprises
producing
providing
releases
releasing
sizes
source
steps
stoichiometric
stoichiometric amount
stoichiometric amounts
substrate
sufficient
sufficient period
telluride
temperature
time
torr
usable
vacuum
vacuum chamber
whereat