Process for producing large grain cadmium telluride

Patent · Mon Jan 01 00:00:00 EST 1996

OSTI ID:870258

Hasoon, Falah S ^[1]; Nelson, Art J ^[2]

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1. Arvada, CO
2. Longmont, CO

A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC36-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 5484736
• OSTI ID: 870258
• Country of Publication: United States
• Language: English

Related Subjects

process
producing
grain
cadmium
telluride
polycrystalline
film
sizes
20
comprises
providing
substrate
deposited
placing
vacuum
chamber
containing
effusion
cell
steps
evacuating
pressure
10
-6
torr
heating
temperature
whereat
releases
stoichiometric
amounts
usable
molecular
beam
source
growth
grains
releasing
deposition
placed
furnace
inert
gas
atmosphere
heated
sufficient
period
time
annealing
grow
polycrystalline film
stoichiometric amounts
comprises providing
vacuum chamber
inert gas
grain size
process comprises
beam source
chamber containing
molecular beam
gas atmosphere
cadmium telluride
stoichiometric amount
sufficient period
annealing temperature
grain sizes
/438/136/148/