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Thin film cadmium telluride solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5449448

Cadmium telluride films have been deposited on foreign substrates by the direct combination of the vapors of the elements in a hydrogen atmosphere. The importance of controlling the Cd/Te molar ratio in the reaction mixture to obtain nearly stoichiometric films was established. The properties of nearly stoichiometric films on mullite substrates were measured by the van der Pauw technique in the temperature range of 25/sup 0/-150/sup 0/C. The current-voltage characteristics of Ag/n-CdTe/W/graphite and Ag/ p-CdTe/W/graphite structures indicate that the CdTe/substrate interfaces are of high resistance. The interface resistance can be reduced substantially by using an In or Sb interlayer to form heavily doped regions. The deposition of p-type cadmium telluride films by using arsine or phosphine as a dopant was studied in detail. The recrystallization of cadmium telluride films by a Nd:YAG laser was investigated. Schottky barrier solar cells were prepared from ntype cadmium telluride films and heterojunction cells from p-type cadmium telluride films.

Research Organization:
Southern Methodist University, Dallas, TX
OSTI ID:
5449448
Report Number(s):
CONF-820906-
Journal Information:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
Country of Publication:
United States
Language:
English