Process for producing large grain cadmium telluride
A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.
- Research Organization:
- Midwest Research Institute
- DOE Contract Number:
- AC36-83CH10093
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- Patent Number(s):
- US 5,484,736/A/
- Application Number:
- PAN: 8-308,362
- OSTI ID:
- 187066
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin film cadmium telluride solar cells
Thin film cadmium telluride solar cells