X-ray lithography using holographic images

Patent · Sat Dec 31 23:00:00 EST 1994

OSTI ID:870098

Howells, Malcolm R ^[1]; Jacobsen, Chris ^[2]

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1. Berkeley, CA
2. Sound Beach, NY

A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
• DOE Contract Number: AC03-76SF00098
• Assignee: Regents of Univerity of Calif. (Oakland, CA)
• Patent Number(s): US 5455850
• OSTI ID: 870098
• Country of Publication: United States
• Language: English

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