Pulsed energy synthesis and doping of silicon carbide

Patent · Sat Dec 31 23:00:00 EST 1994

OSTI ID:869934

Truher, Joel B ^[1]; Kaschmitter, James L ^[2]; Thompson, Jesse B ^[3]; Sigmon, Thomas W ^[4]

---

1. San Rafael, CA
2. Pleasanton, CA
3. Brentwood, CA
4. Beaverton, OR

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5425860
• OSTI ID: 869934
• Country of Publication: United States
• Language: English

Related Subjects

-730
/204/136/
27
5-1
alpha
amorphous
amorphous silicon
application
arrays
bandgap
beta
beta silicon
beta-sic
bipolar
bipolar transistor
bipolar transistors
carbide
carbon
co-depositing
coatings
compound
degree
devices
diodes
dopant
dopant gas
doped
doping
electron
electron transport
emitting
emitting diode
emitting diodes
energy
energy source
etc
excimer
excimer laser
exposure
films
formation
gases
hard coating
hard coatings
hetero-junction
including
introducing
introducing dopant
irradiated
irradiation
laser
layers
light
light emitting
method
micron
multiple
power
power devices
processing
processing step
processing steps
produced
producing
producing beta
properties
pulsed
pulsed energy
range
semiconductors
sensors
silicon
silicon carbide
single
single layer
solar
solar array
source
steps
substrate
synthesis
temperature
temperature range
temperature semiconductor
temperature semiconductors
thicker
thickness
transistors
transport
transport properties
ultra-hard
whereafter
wide
wide temperature