Deposition of device quality low H content, amorphous silicon films
Patent
·
OSTI ID:869789
- Golden, CO
- Evergreen, CO
- Louisville, CO
A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.
- Research Organization:
- MIDWEST RESEARCH INSTITUTE
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 5397737
- OSTI ID:
- 869789
- Country of Publication:
- United States
- Language:
- English
DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD
|
journal | October 1981 |
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20-30
2000
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a-si
amorphous
amorphous silicon
atomic
atomic hydrogen
atomic percent
chamber
chemical
collides
content
decomposed
degree
deposited
deposition
deposition chamber
despite
device
device quality
electrical
filament
film
films
gas
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hydrogenated
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percent
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properties
proximity
quality
sih
silane
silane gas
silicon
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silicon films
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structural
structural properties
substrate
temperature
times
tungsten
20-30
2000
400
a-si
amorphous
amorphous silicon
atomic
atomic hydrogen
atomic percent
chamber
chemical
collides
content
decomposed
degree
deposited
deposition
deposition chamber
despite
device
device quality
electrical
filament
film
films
gas
hot
hydrogen
hydrogen content
hydrogenated
hydrogenated amorphous
lowered
mtorr
passing
percent
preferably
pressure
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properties
proximity
quality
sih
silane
silane gas
silicon
silicon film
silicon films
stream
structural
structural properties
substrate
temperature
times
tungsten