Deposition of device quality low H content, amorphous silicon films
Patent
·
OSTI ID:27691
A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 5,397,737/A/
- Application Number:
- PAN: 8-253,840
- OSTI ID:
- 27691
- Resource Relation:
- Other Information: PBD: 14 Mar 1995
- Country of Publication:
- United States
- Language:
- English
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