skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Evaporation system and method for gas jet deposition of thin film materials

Abstract

A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

Inventors:
;
Publication Date:
Research Org.:
Jet Process Corporation, New Haven, CT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
869562
Patent Number(s):
5,356,673
Application Number:
07/670,693
Assignee:
Jet Process Corporation (New Haven, CT)
DOE Contract Number:  
FG02-88ER13818
Resource Type:
Patent
Resource Relation:
Patent File Date: 1991 Mar 18
Country of Publication:
United States
Language:
English
Subject:
/427/118/

Citation Formats

Schmitt, Jerome J., and Halpern, Bret L. Evaporation system and method for gas jet deposition of thin film materials. United States: N. p., 1994. Web.
Schmitt, Jerome J., & Halpern, Bret L. Evaporation system and method for gas jet deposition of thin film materials. United States.
Schmitt, Jerome J., and Halpern, Bret L. Sat . "Evaporation system and method for gas jet deposition of thin film materials". United States. https://www.osti.gov/servlets/purl/869562.
@article{osti_869562,
title = {Evaporation system and method for gas jet deposition of thin film materials},
author = {Schmitt, Jerome J. and Halpern, Bret L.},
abstractNote = {A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.},
doi = {},
url = {https://www.osti.gov/biblio/869562}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

Save / Share: