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Title: Microwave plasma assisted supersonic gas jet deposition of thin film materials

Abstract

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Inventors:
 [1];  [2]
  1. (New Haven, CT)
  2. (Bethany, CT)
Publication Date:
Research Org.:
SCHMITT TECHNOLOGY ASSOC
OSTI Identifier:
868978
Patent Number(s):
US 5256205
Assignee:
Jet Process Corporation (New Haven, CT) CHO
DOE Contract Number:  
FG02-88ER13818
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
microwave; plasma; assisted; supersonic; gas; jet; deposition; film; materials; apparatus; fabricating; utilizing; speed; dynamics; relies; free; jets; carrier; transport; depositing; vapor; species; generated; discharge; surface; prepared; substrate; deposits; form; generates; rates; films; unforeseen; quality; temperatures; plasma assisted; microwave discharge; free jet; film materials; vapor species; gas jet; carrier gas; film material; microwave plasma; species generated; materials utilizing; supersonic gas; supersonic free; jet deposition; speed gas; assisted supersonic; /118/315/

Citation Formats

Schmitt, III, Jerome J., and Halpern, Bret L.. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States: N. p., 1993. Web.
Schmitt, III, Jerome J., & Halpern, Bret L.. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States.
Schmitt, III, Jerome J., and Halpern, Bret L.. Fri . "Microwave plasma assisted supersonic gas jet deposition of thin film materials". United States. https://www.osti.gov/servlets/purl/868978.
@article{osti_868978,
title = {Microwave plasma assisted supersonic gas jet deposition of thin film materials},
author = {Schmitt, III, Jerome J. and Halpern, Bret L.},
abstractNote = {An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1993},
month = {Fri Jan 01 00:00:00 EST 1993}
}

Patent:

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