Microwave plasma assisted supersonic gas jet deposition of thin film materials
Patent
·
OSTI ID:868978
An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.
- Research Organization:
- Jet Process Corp., New Haven, CT (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-88ER13818
- Assignee:
- Jet Process Corporation (New Haven, CT)
- Patent Number(s):
- 5,256,205
- Application Number:
- 07/817,518
- OSTI ID:
- 868978
- Country of Publication:
- United States
- Language:
- English
Synthesis of diamond films in a rf induction thermal plasma
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journal | September 1987 |
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