Method for microwave plasma assisted supersonic gas jet deposition of thin films

Patent · Tue Oct 18 04:00:00 EDT 1994

OSTI ID:6897079

Schmitt, III, J J; Halpern, B L

A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate. The substrate can be translated from the supersonic jet to a second supersonic jet in less time than needed to complete film formation so that the film is chemically composed of chemical reaction products of vapor species in the jets. 5 figs.

• DOE Contract Number: FG02-88ER13818
• Assignee: Jet Process Corp., New Haven, CT (United States)
• Patent Number(s): A; US 5356672
• Application Number: PPN: US 7-521100
• OSTI ID: 6897079
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DEPOSITION
EQUIPMENT
FILMS
FLUID FLOW
SUPERSONIC FLOW
SURFACE COATING
THIN FILMS
VACUUM SYSTEMS
VAPOR DEPOSITED COATINGS