Microwave plasma assisted supersonic gas jet deposition of thin film materials

Patent · Tue Oct 26 04:00:00 EDT 1993

OSTI ID:5440680

Schmitt, III, J J; Halpern, B L

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

• DOE Contract Number: FG02-88ER13818
• Assignee: Jet Process Corp., New Haven, CT (United States)
• Patent Number(s): US 5256205; A
• Application Number: PPN: US 7-817518
• OSTI ID: 5440680
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360601 -- Other Materials-- Preparation & Manufacture
COATINGS
DEPOSITION
ELECTROMAGNETIC RADIATION
FILMS
MICROWAVE RADIATION
PERFORMANCE
PHYSICAL VAPOR DEPOSITION
RADIATIONS
SURFACE COATING
THIN FILMS
VAPOR DEPOSITED COATINGS