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Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

Patent ·
OSTI ID:869344
 [1]
  1. Albuquerque, NM
+ Show Author Affiliations

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

Research Organization:
AT & T CORP
DOE Contract Number:
AC04-76DP00789
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 5319659
OSTI ID:
869344
Country of Publication:
United States
Language:
English

References (11)

Integrated injection‐locked high‐power cw diode laser arrays journal August 1989
Beam scanning with twin‐stripe injection lasers journal October 1978
Injection‐locking characteristics of gain‐guided diode laser arrays with an ‘‘on‐chip’’ master laser journal April 1990
Interelement coupling in gain‐guided diode laser arrays journal June 1986
Laser beam scanning using a local deflector integrated with an effective mode filter journal December 1987
Near‐diffraction‐limited angle‐switchable output beam from a broad‐area diode laser with an intracavity spatial phase controller journal June 1991
Analysis of a double-heterostructure spatial-phase controller for diode-laser beam steering journal December 1988
Beam scanning and switching characteristics of twin-striped lasers with a reduced stripe spacing journal January 1985
High power, high brightness 2 W (200 μm) and 3 W (500 μm) CW AlGaAs laser diode arrays with long lifetimes journal May 1990
Tilted‐mirror semiconductor lasers journal July 1985
Modal analysis of semiconductor lasers with nonplanar mirrors journal March 1986

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Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching
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Related Subjects

/372/
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