Crystallization from high temperature solutions of Si in copper
- Evergreen, CO
A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- US 5314571
- OSTI ID:
- 869314
- Country of Publication:
- United States
- Language:
- English
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