Mechanism of low-temperature ( le 300 degree C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation

Journal Article · Sat Jun 15 04:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.43.14643· OSTI ID:5553277

Nakata, J ^[1]

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1. NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., 243-01, Japan (JP)

By high-energy ({similar to}2.5-MeV) heavy-ion ({sup 75}As{sup +}, {sup 84}Kr{sup +}, {sup 131,132}Xe{sup +}, etc.) beam irradiation, the amorphous Si layers on the crystalline Si substrates formed by low-energy ({similar to}100-keV) ion implantation or by chemical-vapor deposition could be crystallized epitaxially at very low substrate temperatures (120--300 {degree}C, in the 2.5-MeV {sup 75}As{sup +} irradiation case), far below the ordinary solid-phase ({similar to}600 {degree}C) or liquid-phase ({similar to}1400 {degree}C) epitaxial growth temperatures. Layer-by-layer amorphization of amorphous Si layers on the crystalline Si substrates also occurred at low temperatures ({le}120 {degree}C, in the 2.5-MeV {sup 75}As{sup +} irradiation case). The author elucidates the low-temperature (120--300 {degree}C) crystallization mechanism and the low-temperature ({le}120 {degree}C) amorphization mechanism. The thermal diffusion of vacancies towards the amorphous layer, produced by nuclear scattering of incident heavy ions in the crystalline substrate, plays an important role in the low-temperature crystallization. High incident energies also contribute to the enhanced vacancy diffusion due to their large electronic scattering. Whether crystallization or amorphization occurs depends on the balance at the crystalline-amorphous interface, between the vacancy concentration supplied from the crystalline substrate toward the amorphous layer via thermal diffusion and the interstitial Si-atom concentration supplied from the amorphous layer toward the crystalline substrate via recoil by incident heavy ions.

• OSTI ID: 5553277
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:18; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ARSENIC 75
ARSENIC ISOTOPES
BEAMS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALLIZATION
DAYS LIVING RADIOISOTOPES
ELEMENTS
ENERGY RANGE
EPITAXY
EVEN-EVEN NUCLEI
EVEN-ODD NUCLEI
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ION BEAMS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
KRYPTON 84
KRYPTON ISOTOPES
LAYERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 01-10
MICROSEC LIVING RADIOISOTOPES
NUCLEI
ODD-EVEN NUCLEI
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOISOTOPES
SECONDS LIVING RADIOISOTOPES
SEMIMETALS
SILICON
STABLE ISOTOPES
TEMPERATURE DEPENDENCE
XENON 131
XENON 132
XENON ISOTOPES