Ion beam induced epitaxial crystallization of NiSi sub 2

Journal Article · Mon May 21 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102989· OSTI ID:6817922

Ridgway, M C; Elliman, R G; Williams, J S ^[1]

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1. Microelectronics and Materials Technology Centre, Melburne, Australia (Australia) Royal Melbourne Institute of Technology, Melbourne, Australia (Australia)

Ion beam induced epitaxial crystallization of amorphous NiSi{sub 2} is reported. Epitaxial NiSi{sub 2} layers on (111) Si substrates were implanted at {similar to}{minus}196 {degree}C with low-energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi{sub 2} was induced at 13--58 {degree}C by irradiating with high-energy Si or Ne ions. Recrystallization proceeded in a layer-by-layer manner from the original amorphous/crystalline interface with an activation energy of 0.26{plus minus}0.07 eV.

• OSTI ID: 6817922
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:21; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ACTIVATION ENERGY
BEAMS
ELECTRONIC CIRCUITS
ENERGY
EPITAXY
INTEGRATED CIRCUITS
ION BEAMS
ION IMPLANTATION
MICROELECTRONIC CIRCUITS
NICKEL COMPOUNDS
NICKEL SILICIDES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECRYSTALLIZATION
SILICIDES
SILICON COMPOUNDS
STOICHIOMETRY
TRANSITION ELEMENT COMPOUNDS