Ion beam induced epitaxial crystallization of Ge sub x Si sub 1 minus x /Si structures

Journal Article · Mon Aug 28 04:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102264· OSTI ID:5613449

Elliman, R G; Ridgway, M C; Williams, J S; Bean, J C ^[1]

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1. Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria, Australia (AU)

Ge{sub {ital x}}Si{sub 1{minus}{ital x}} alloy layers grown on (100) silicon substrates by molecular beam epitaxy and amorphized by ion irradiation at {minus}196 {degree}C are shown to recrystallize epitaxially during subsequent ion irradiation at 275 {degree}C. This ion beam annealing process has been examined for two different sample configurations: the first consisting of a thin amorphous layer extending from the surface to about half the thickness of the alloy layer, and the second consisting of a thick amorphous layer extending beyond the alloy layer into the underlying silicon. In both cases, ion beam annealing results in epitaxial crystallization of the alloy layer. Results are reported for alloy composition in the range from Ge{sub 0.1}Si{sub 0.9} to Ge{sub 0.8}Si{sub 0.2}.

• OSTI ID: 5613449
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:9; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
BEAMS
COLLISIONS
CRYSTALLIZATION
DIMENSIONS
ELEMENTS
EPITAXY
FILMS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
ION BEAMS
ION COLLISIONS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICIDES
SILICON
SILICON 28 BEAMS
SILICON COMPOUNDS
THICKNESS
THIN FILMS