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Crystallization from high temperature solutions of Si in Cu/Al solvent

Patent ·
OSTI ID:870552
 [1];  [2]
  1. Evergreen, CO
  2. Golden, CO
+ Show Author Affiliations

A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

Research Organization:
Midwest Research Institute
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-83CH10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 5544616
Application Number:
08/249,957
OSTI ID:
870552
Country of Publication:
United States
Language:
English

References (1)

Si thin layer growth from metal solutions on single-crystal and cast metallurgical-grade multicrystalline Si substrates conference January 1993

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