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Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

Patent ·
OSTI ID:868592
 [1]
  1. San Pablo, CA
+ Show Author Affiliations
Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
DOE Contract Number:
AC03-76SF00098
Assignee:
Regents of University of Calif. (Oakland, CA)
Patent Number(s):
US 5171610
OSTI ID:
868592
Country of Publication:
United States
Language:
English

References (5)

Reaktivität von Metall-Metall-Bindungen. Bildung und Zerfall einfacher Metallcarbonyl-Zweikernkomplexe als Gleichgewichtsreaktion journal August 1980
915. Tricarbonylcyclopentadienyliron-cyclopentadienylnickel and some new cyclopentadienylnickel-irontricarbonyl–acetylene complexes journal January 1963
New polynuclear carbonyl complexes containing iron with cobalt or rhodium journal January 1970
Reactivity of NO 2 [sbnd] towards Co 2 (CO) 8 : Direct Synthesis of Co(NO)(CO) 3 journal January 1976
Chemical vapor deposition of iron-cobalt (FeCox) and iron cobalt oxide (FeCoxOy) thin films from iron cobalt carbonyl clusters journal January 1988

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Related Subjects

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