Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

Patent · Tue Dec 15 04:00:00 EST 1992

OSTI ID:7233744

Liu, D K

Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.

• DOE Contract Number: AC03-76SF00098
• Assignee: Univ. of California, Oakland, CA (United States)
• Patent Number(s): A; US 5171610
• Application Number: PPN: US 7-574204
• OSTI ID: 7233744
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALLOYS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DECOMPOSITION
DEPOSITION
ELECTROMAGNETIC RADIATION
OXIDES
OXYGEN COMPOUNDS
PHOTOCHEMICAL REACTIONS
PHOTOLYSIS
RADIATIONS
SURFACE COATING
VISIBLE RADIATION