Vapor deposition of thin films

Patent · Tue Dec 31 23:00:00 EST 1991

OSTI ID:868473

Smith, David C ^[1]; Pattillo, Stevan G ^[1]; Sattelberger, Alfred P ^[1]

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1. Los Alamos, NM

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM
• DOE Contract Number: W-7405-ENG-36
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5149596
• OSTI ID: 868473
• Country of Publication: United States
• Language: English

Related Subjects

/428/427/
additionally
allyl
assisted
assisted chemical
carbon
carbon content
chemical
chemical vapor
compounds
content
crystalline structure
deposition
disclosed
film
films
highly
highly pure
iridium
line structure
metal
metal film
metal films
metallic
metallic film
metallic precursor
molybdenum
nanocrystalline
organometallic
palladium
plasma
plasma assisted
platinum
precursor
precursor compound
precursor compounds
prepared
preparing
process
pure
reducing
rhenium
rhodium
structure
tungsten
vapor
vapor deposition