Vapor deposition of thin films

Patent · Wed Jan 01 00:00:00 EST 1992

OSTI ID:868473

Smith, David C ^[1]; Pattillo, Stevan G ^[1]; Sattelberger, Alfred P ^[1]

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1. Los Alamos, NM

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• DOE Contract Number: W-7405-ENG-36
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5149596
• OSTI ID: 868473
• Country of Publication: United States
• Language: English

Related Subjects

vapor
deposition
films
highly
pure
metal
film
nanocrystalline
structure
process
preparing
rhodium
iridium
molybdenum
tungsten
rhenium
platinum
palladium
plasma
assisted
chemical
allyl
disclosed
additionally
reducing
carbon
content
metallic
prepared
organometallic
precursor
compounds
plasma assisted
assisted chemical
metal films
metal film
chemical vapor
vapor deposition
crystalline structure
highly pure
precursor compounds
carbon content
precursor compound
metallic film
metallic precursor
line structure
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