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Title: Vapor deposition of thin films

Abstract

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

Inventors:
 [1];  [1];  [1];  [1]
  1. (Los Alamos, NM)
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM
OSTI Identifier:
868473
Patent Number(s):
US 5149596
Assignee:
United States of America as represented by United States (Washington, DC) LANL
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
vapor; deposition; films; highly; pure; metal; film; nanocrystalline; structure; process; preparing; rhodium; iridium; molybdenum; tungsten; rhenium; platinum; palladium; plasma; assisted; chemical; allyl; disclosed; additionally; reducing; carbon; content; metallic; prepared; organometallic; precursor; compounds; plasma assisted; assisted chemical; metal films; metal film; chemical vapor; vapor deposition; crystalline structure; highly pure; precursor compounds; carbon content; precursor compound; metallic film; metallic precursor; line structure; /428/427/

Citation Formats

Smith, David C., Pattillo, Stevan G., Laia, Jr., Joseph R., and Sattelberger, Alfred P. Vapor deposition of thin films. United States: N. p., 1992. Web.
Smith, David C., Pattillo, Stevan G., Laia, Jr., Joseph R., & Sattelberger, Alfred P. Vapor deposition of thin films. United States.
Smith, David C., Pattillo, Stevan G., Laia, Jr., Joseph R., and Sattelberger, Alfred P. Wed . "Vapor deposition of thin films". United States. https://www.osti.gov/servlets/purl/868473.
@article{osti_868473,
title = {Vapor deposition of thin films},
author = {Smith, David C. and Pattillo, Stevan G. and Laia, Jr., Joseph R. and Sattelberger, Alfred P.},
abstractNote = {A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}

Patent:

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