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Title: Oxygen ion-beam microlithography

Abstract

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.

Inventors:
 [1]
  1. Lakewood, CO
Publication Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
867945
Patent Number(s):
US 5041361
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
oxygen; ion-beam; microlithography; method; providing; developing; resist; substrate; constructing; integrated; circuit; chips; following; steps; depositing; film; amorphous; silicon; hydrogenated; exposing; portions; low-energy; beams; oxidize; selected; nonoxidized; removed; etching; rf-excited; hydrogen; plasma; components; chip; constructed; entire; process; performed; in-line; vacuum; production; chambers; nitrogen; carbon; vacuum chamber; amorphous silicon; hydrogenated amorphous; integrated circuit; selected portion; selected portions; following steps; entire process; vacuum chambers; oxidized portion; line vacuum; /430/216/250/438/

Citation Formats

Tsuo, Y Simon. Oxygen ion-beam microlithography. United States: N. p., 1991. Web.
Tsuo, Y Simon. Oxygen ion-beam microlithography. United States.
Tsuo, Y Simon. 1991. "Oxygen ion-beam microlithography". United States. https://www.osti.gov/servlets/purl/867945.
@article{osti_867945,
title = {Oxygen ion-beam microlithography},
author = {Tsuo, Y Simon},
abstractNote = {A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.},
doi = {},
url = {https://www.osti.gov/biblio/867945}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}