Oxygen ion-beam microlithography

Patent · Tue Jan 01 00:00:00 EST 1991

OSTI ID:867945

Tsuo, Y Simon ^[1]

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1. Lakewood, CO

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 5041361
• OSTI ID: 867945
• Country of Publication: United States
• Language: English

Related Subjects

oxygen
ion-beam
microlithography
method
providing
developing
resist
substrate
constructing
integrated
circuit
chips
following
steps
depositing
film
amorphous
silicon
hydrogenated
exposing
portions
low-energy
beams
oxidize
selected
nonoxidized
removed
etching
rf-excited
hydrogen
plasma
components
chip
constructed
entire
process
performed
in-line
vacuum
production
chambers
nitrogen
carbon
vacuum chamber
amorphous silicon
hydrogenated amorphous
integrated circuit
selected portion
selected portions
following steps
entire process
vacuum chambers
oxidized portion
line vacuum
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