Oxygen ion-beam microlithography

Patent · Tue Jan 01 04:00:00 EST 1991

OSTI ID:867945

Tsuo, Y Simon ^[1]

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1. Lakewood, CO

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.

• Research Organization: MIDWEST RESEARCH INSTITUTE
• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 5041361
• OSTI ID: 867945
• Country of Publication: United States
• Language: English

Related Subjects

/430/216/250/438/
amorphous
amorphous silicon
beams
carbon
chambers
chip
chips
circuit
components
constructed
constructing
depositing
developing
entire
entire process
etching
exposing
film
following
following steps
hydrogen
hydrogenated
hydrogenated amorphous
in-line
integrated
integrated circuit
ion-beam
line vacuum
low-energy
method
microlithography
nitrogen
nonoxidized
oxidize
oxidized portion
oxygen
performed
plasma
portions
process
production
providing
removed
resist
rf-excited
selected
selected portion
selected portions
silicon
steps
substrate
vacuum
vacuum chamber
vacuum chambers