Hydrogen ion microlithography

Patent · Mon Jan 01 00:00:00 EST 1990

OSTI ID:867542

Tsuo, Y Simon ^[1]; Deb, Satyen K ^[2]

---

1. Lakewood, CO
2. Boulder, CO

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 4960675
• OSTI ID: 867542
• Country of Publication: United States
• Language: English

Related Subjects

hydrogen
microlithography
disclosed
process
microelectronic
fabrication
semiconductor
device
processing
comprises
steps
providing
single
layer
amorphous
silicon
hydrogenated
material
pattern
recorded
selected
materials
preferentially
implanting
therein
permit
serve
mask-resist
wafer
suitable
subsequent
developed
provide
surface
adaptable
silicon material
microelectronic fabrication
device fabrication
single layer
amorphous silicon
hydrogenated amorphous
process comprises
semiconductor device
surface pattern
/430/250/438/