Hydrogen ion microlithography

Patent · Sun Dec 31 23:00:00 EST 1989

OSTI ID:867542

Tsuo, Y Simon ^[1]; Deb, Satyen K ^[2]

---

1. Lakewood, CO
2. Boulder, CO

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

• Research Organization: MIDWEST RESEARCH INSTITUTE
• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 4960675
• OSTI ID: 867542
• Country of Publication: United States
• Language: English

Related Subjects

/430/250/438/
adaptable
amorphous
amorphous silicon
comprises
developed
device
device fabrication
disclosed
fabrication
hydrogen
hydrogenated
hydrogenated amorphous
implanting
layer
mask-resist
material
materials
microelectronic
microelectronic fabrication
microlithography
pattern
permit
preferentially
process
process comprises
processing
provide
providing
recorded
selected
semiconductor
semiconductor device
serve
silicon
silicon material
single
single layer
steps
subsequent
suitable
surface
surface pattern
therein
wafer