Oxygen ion-beam microlithography

Patent · Tue Aug 20 00:00:00 EDT 1991

OSTI ID:7275197

Tsuo, Y S

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.

• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Institute, Kansas City, MO (United States)
• Patent Number(s): US 5041361; A
• Application Number: PPN: US 7-457852
• OSTI ID: 7275197
• Resource Relation: Patent File Date: 27 Dec 1989
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INTEGRATED CIRCUITS
MASKING
ETCHING
FABRICATION
ION BEAMS
NITROGEN IONS
OXIDATION
OXYGEN IONS
SILICON
BEAMS
CHARGED PARTICLES
CHEMICAL REACTIONS
ELECTRONIC CIRCUITS
ELEMENTS
IONS
MICROELECTRONIC CIRCUITS
SEMIMETALS
SURFACE FINISHING
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)