Selective patterning of single-crystal GaAs/Ge structures on Si substrates by molecular beam epitaxy

Journal Article · Wed May 01 04:00:00 EDT 1985 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.573339· OSTI ID:5625330

Sheldon, P; Dick, J R; Hayes, R E

Patterned single-crystal GaAs/Ge layers are grown on Si substrates by molecular beam epitaxy deposition through a bilayer mask. The ability to pattern device-quality GaAs structures on Si allows for integration of GaAs and Si devices on a monolithic chip. In this paper we describe the experimental details of a process that could be used to fabricate such circuits. The Si substrate, before growth, is patterned using a bilayer silicon nitride/silicon dioxide mask and conventional photolithographic techniques. During growth, in areas where the Si substrate is exposed, the GaAs/Ge layers grow epitaxially. After growth, a chemical etch is used that dissolves the mask, retaining the single-crystal GaAs/Ge pattern. The bilayer mask yields good pattern replication and prevents diffusion of Ga and As into the underlying Si devices, as shown by secondary ion mass spectroscopy data. The bilayer mask also aids in the lift-off process where thick GaAs/Ge layers are required and 100% lift-off yield is mandatory. Sample morphology and crystallinity are examined by scanning electron microscopy and reflection high-energy electron diffraction.

• Research Organization: Solar Energy Research Institute, Photovoltaic Devices and Measurements Branch, Golden, Colorado 80401
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5625330
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 3:3; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COATINGS
CRYSTAL STRUCTURE
DIFFUSION
ELEMENTS
EPITAXY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
MASS SPECTROSCOPY
METALS
MICROELECTRONICS
MINERALS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NITRIDES
NITROGEN COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SPECTROSCOPY
SURFACE FINISHING
VAPOR DEPOSITED COATINGS