Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy

Journal Article · Wed Aug 01 04:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95170· OSTI ID:6704583

Sheldon, P; Jones, K M; Hayes, R E; Tsaur, B; Fan, J C.C.

Single crystal GaAs layers have been grown on Si substrates with an intermediate Ge layer. Both the Ge and subsequent GaAs are grown in situ by molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy studies show GaAs surface dislocation densities on the order of 10/sup 7/ cm/sup -2/. The quality of the GaAs is indicated by a mobility within 15% of that measured on GaAs/GaAs MBE structures doped at the same level. This material also exhibits a photoluminescence signal with a room-temperature intensity about 50% of GaAs grown on GaAs, and with a similar half-width. In this letter, electron diffraction, optical and electrical data are presented for n-type GaAs/Ge/Si structures. In addition, a selective lift-off technique is demonstrated, with possible applications in the development of monolithic GaAs/Si integrated circuits.

• Research Organization: Solar Energy Research Institute, Photovoltaic Devices and Measurements Branch, Golden, Colorado 80401
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6704583
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HETEROJUNCTIONS
INTEGRATED CIRCUITS
JUNCTIONS
LAYERS
LINE DEFECTS
LUMINESCENCE
METALS
MICROELECTRONIC CIRCUITS
MICROSCOPY
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SURFACE COATING
SURFACE FINISHING
SURFACES
TRANSMISSION ELECTRON MICROSCOPY