Method of bonding single crystal quartz by field-assisted bonding

Patent · Mon Dec 31 23:00:00 EST 1990

OSTI ID:867784

Curlee, Richard M ^[1]; Tuthill, Clinton D ^[2]; Watkins, Randall D ^[3]

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1. Tijeras, NM
2. Edgewood, NM
3. Albuquerque, NM

The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5009690
• OSTI ID: 867784
• Country of Publication: United States
• Language: English

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